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MW6S010NR1

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MFG：

D/C：

13+

QTY：

6000

Packaging：

Package：

Note：

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Part No.	MFG	D/C	QTY	Packaging	Package	Note	PDF	WORD
MW6S010NR1	NXP	21+	8000	LDMOS		移动通信基础设施
MW6S004NT1	NXP	21+	2000	LDMOS		移动通信基础设施
MW6S010GNR1	NXP	21+	3560	LDMOS		移动通信基础设施
MW6S010GNR1	NXP USA Inc.	18+	0	TO-270-2 鸥翼型	晶体管FETMOSFET 射频	FET RF 68V 960MHZ TO270-2GW
MW6S010GNR1	NXP USA Inc.	18+	0	TO-270-2 鸥翼型	晶体管FETMOSFET 射频	FET RF 68V 960MHZ TO270-2GW
MW6S010GNR1	NXP USA Inc.	18+	0	TO-270-2 鸥翼型	晶体管FETMOSFET 射频	FET RF 68V 960MHZ TO270-2GW
MW6S004NT1	NXP USA Inc.	18+	333	PLD-1.5	晶体管FETMOSFET 射频	FET RF 68V 1.96GHZ PLD-1.5
MW6S004NT1	NXP USA Inc.	18+	0	PLD-1.5	晶体管FETMOSFET 射频	FET RF 68V 1.96GHZ PLD-1.5
MW6S004NT1	NXP USA Inc.	18+	0	PLD-1.5	晶体管FETMOSFET 射频	FET RF 68V 1.96GHZ PLD-1.5
MW6S010NR1	NXP USA Inc.	18+	0	TO-270AA	晶体管FETMOSFET 射频	FET RF 68V 960MHZ TO270-2
MW6S010NR1	NXP USA Inc.	18+	0	TO-270AA	晶体管FETMOSFET 射频	FET RF 68V 960MHZ TO270-2
MW6S010NR1	NXP USA Inc.	18+	0	TO-270AA	晶体管FETMOSFET 射频	FET RF 68V 960MHZ TO270-2
MW6S010GNR1	NXP\|Freescale	16+	1311	TO-270-2 Gull		射频金属氧化物半导体场效应(RF MOSFET)晶体管
MW6S010NR1	NXP\|Freescale	16+	532	TO-270		射频金属氧化物半导体场效应(RF MOSFET)晶体管
MW6S004NT1	NXP\|Freescale	16+	824	PLD-1.5-3		射频金属氧化物半导体场效应(RF MOSFET)晶体管
MW6S010NR1	FSL	13+	2000			代理现货

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