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Part No.：

A2T18S160W31GSR3

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MFG：

D/C：

16+

QTY：

21

Packaging：

Package：

Note：

射频金属氧化物半导体场效应(RF MOSFET)晶体管

RFQ

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the relation stock of A2T18S160W31GSR3

Part No.	MFG	D/C	QTY	Packaging	Package	Note	PDF	WORD
A2T18S261W12NR3	NXP	21+	5000	LDMOS		移动通信基础设施
A2T18S260W12NR3	NXP	21+	8000	LDMOS		移动通信基础设施
A2T18S162W31SR3	NXP	21+	9000	LDMOS		移动通信基础设施
A2T18S162W31GSR3	NXP	21+	1900	LDMOS		移动通信基础设施
A2T18S160W31SR3	NXP	21+	1500	LDMOS		移动通信基础设施
A2T18H455W23NR6	NXP	21+	5600	LDMOS		移动通信基础设施
A2T18H450W19SR6	NXP	21+	4800	GaN		移动通信基础设施
A2T18S160W31GSR3	NXP	21+	3560	LDMOS		移动通信基础设施
A2T18S262W12NR3	NXP	21+	5000	LDMOS		移动通信基础设施
A2T18S260-12SR3	NXP	21+	8000	LDMOS		移动通信基础设施
A2T18S166W12SR3	NXP	21+	9000	LDMOS		移动通信基础设施
A2T18S165-12SR3	NXP	21+	1900	LDMOS		移动通信基础设施
A2T18H410-24SR6	NXP	21+	1500	LDMOS		移动通信基础设施
A2T18H160-24SR3	NXP	21+	5600	LDMOS		移动通信基础设施
A2T18H100-25SR3	NXP	21+	4800	LDMOS		移动通信基础设施
A2T14H450-23NR6	NXP	21+	3560	LDMOS		移动通信基础设施

the relation picture ofA2T18S160W31GSR3

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