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NXP Address：Home > BLM8G0710S-15PBGY

Part No.： BLM8G0710S-15PBGY no BLM8G0710S-15PBGY 's picture
MFG： NXP
D/C： 16+
QTY： 17
Packaging：
Package：
Note： 射频金属氧化物半导体场效应(RF MOSFET)晶体管
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Part No. MFG D/C QTY Packaging Package Note PDF WORD
BLM8G0710S-60PBGY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 36.2DB SOT12122
BLM8G0710S-45ABGY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 35DB SOT12122
BLM8G0710S-15PBGY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 36.1DB SOT12122
BLM8G0710S-45ABY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 35DB SOT12112
BLM8G0710S-45ABY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 35DB SOT12112
BLM8G0710S-45ABY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 35DB SOT12112
BLM8G0710S-60PBY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 36.2DB SOT12112
BLM8G0710S-60PBY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 36.2DB SOT12112
BLM8G0710S-60PBY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 36.2DB SOT12112
BLM8G0710S-15PBY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 36.1DB SOT12112
BLM8G0710S-15PBY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 36.1DB SOT12112
BLM8G0710S-15PBY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 36.1DB SOT12112
BLM8G0710S-30PBY Ampleon USA Inc. 18+ 0 SOT-1211-1 晶体管FETMOSFET 射频 RF FET LDMOS 65V 35DB SOT12111
BLM8G0710S-30PBY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 35DB SOT12112
BLM8G0710S-30PBY Ampleon USA Inc. 18+ 0 SOT-1211-2 晶体管FETMOSFET 射频 RF FET LDMOS 65V 35DB SOT12112
BLM8G0710S-45ABGY NXP 16+ 28 射频金属氧化物半导体场效应(RF MOSFET)晶体管

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