| TOSHIBA |
Address：Home > 3SK260-GR |
|
| the relation stock of 3SK260-GR |
| Part No. |
MFG |
D/C |
QTY |
Packaging |
Package |
Note |
PDF |
WORD |
| 3SK292(TE85R,F) |
Toshiba and Storage |
18+ |
0 |
SC-61AA |
晶体管FETMOSFET 射频 |
MOSFET N-CH 12.5 30MA SMQ
|
 |
 |
| 3SK292(TE85R,F) |
Toshiba and Storage |
18+ |
0 |
SC-61AA |
晶体管FETMOSFET 射频 |
MOSFET N-CH 12.5 30MA SMQ
|
|
|
| 3SK292(TE85R,F) |
Toshiba and Storage |
18+ |
0 |
SC-61AA |
晶体管FETMOSFET 射频 |
MOSFET N-CH 12.5 30MA SMQ
|
|
|
| 3SK291(TE85L,F) |
Toshiba and Storage |
18+ |
0 |
SC-61AA |
晶体管FETMOSFET 射频 |
MOSFET N-CH SMQ
|
|
|
| 3SK291(TE85L,F) |
Toshiba and Storage |
18+ |
0 |
SC-61AA |
晶体管FETMOSFET 射频 |
MOSFET N-CH SMQ
|
|
|
| 3SK291(TE85L,F) |
Toshiba and Storage |
18+ |
0 |
SC-61AA |
晶体管FETMOSFET 射频 |
MOSFET N-CH SMQ
|
|
|
| 3SK294(TE85L,F) |
Toshiba and Storage |
18+ |
0 |
SC-82A，SOT-343 |
晶体管FETMOSFET 射频 |
FET RF 12.5V 500MHZ USQ
|
|
|
| 3SK294(TE85L,F) |
Toshiba and Storage |
18+ |
0 |
SC-82A，SOT-343 |
晶体管FETMOSFET 射频 |
FET RF 12.5V 500MHZ USQ
|
|
|
| 3SK293(TE85L,F) |
Toshiba and Storage |
18+ |
0 |
SC-82A，SOT-343 |
晶体管FETMOSFET 射频 |
FET RF 12.5V 800MHZ USQ
|
|
|
| 3SK294(TE85L,F) |
Toshiba and Storage |
18+ |
0 |
SC-82A，SOT-343 |
晶体管FETMOSFET 射频 |
FET RF 12.5V 500MHZ USQ
|
|
|
| 3SK293(TE85L,F) |
Toshiba and Storage |
18+ |
0 |
SC-82A，SOT-343 |
晶体管FETMOSFET 射频 |
FET RF 12.5V 800MHZ USQ
|
|
|
| 3SK293(TE85L,F) |
Toshiba and Storage |
18+ |
18000 |
SC-82A，SOT-343 |
晶体管FETMOSFET 射频 |
FET RF 12.5V 800MHZ USQ
|
|
|
| 3SK291(TE85L F) |
Toshiba |
16+ |
3641 |
SOT-24 |
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
|
|
|
| 3SK294(TE85L F) |
Toshiba |
16+ |
4546 |
USQ-4 |
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
|
|
|
| 3SK293(TE85L F) |
Toshiba |
16+ |
4900 |
SOT-343 |
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
|
|
|
| 3SK292(TE85R F) |
Toshiba |
16+ |
5276 |
SMQ-4 |
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
|
|
|
| the relation picture of3SK260-GR |
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