英飞凌K25H1203 / IKW25N120H3 完美替代K25T120 / K25T1202 IGBT单管

英飞凌K25H1203 / IKW25N120H3 完美替代K25T120 (IKW25T120) / K25T1202 (IKW25N120T2) IGBT单管

英飞凌K25H1203 / IKW25N120H3是英飞凌第三代1200V高开关速度IGBT单管, 能够完美替代K25T120 / K25T1202 ，专用于焊接、太阳能发电逆变器和UPS等IGBT高频应用领域。

K40H1203( IKW40N120H3) / K40T120 (IKW405T120) / K40T1202 (IKW40N120T2) 参数比较说明：

Type	V_CE	I_C	V_CE(sat) Tvj= 5°C	Tvj (max)	Marking	Package
IKW25N120H3	1200V	25A	2.05V	175°C	K25H1203	PG-TO247-3
IKW25N120T2	1200V	25A	1.75V	175°C	K25T1202	PG-TO247-3
IKW25T120	1200V	25A	1.7V	150°C	K25T120	PG-TO247-3

K25H1203( IKW25N120H3) / K25T120 (IKW25T120) / K25T1202 (IKW25N120T2) 最大额定值比较说明:

Parameter	Symbol	Value			Unit
Parameter	Symbol	K25H1203	K25T1202	K25T120	Unit
Collector-emitter voltage	VCE	1200	1200	1200	V
DC collector current TC = 25°C TC = 100°C	IC	50 25	50 25	50 25	A
Pulsed collector current, tp limited by Tjmax	ICpul s	100	100	75
Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C	-	100	100	75
Diode forward current TC = 25°C TC = 100°C	IF	25 12	40 25	50 25
Diode pulsed current, tp limited by Tjmax	IFpul s	100	100	75
Gate-emitter voltage	VGE	±20	±20	±20	V
Short circuit withstand time2) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C	tSC	10	10	10	us
Power dissipation TC = 25°C	Pt ot	326.0 156.0	349	190	W
Operating junction temperature	Tj	-40...+175	-40...+175	-40...+150	°C
Storage temperature	Tstg	-55...+150	-55...+150	-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s Wavesoldering only, temperature on leads only	-	260	260	260
Mounting torque,M3 screw Maxim of mounting processes:3	M	0.6	-	-	Nm

K25H1203 / IKW25N120H3 特点：
•最高结温度为175℃

•非常低VCEsat
•低开关损耗
•较高的开关坚韧性

•内置快速恢复反并联二极管
•根据JEDEC1合格为目标
•无铅引脚电镀符合RoHS标准

应用范围：
•UPS(不中断电源/不间断电源)
•焊接器

•太阳能发电用逆变器