英飞凌SGP07N120/ GP07N120 NPT技术 IGBT单管 参数说明
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英飞凌SGP07N120/ GP07N120 IGBT单管特点：
•比上一代低EOFF
•短路承受时间：-10微秒
•NPT 技术：
- 参数分布非常紧凑
- 高耐用性，温度稳定的行为
- 并行交换能力
•根据JEDEC1合格为目标
•无铅电镀引脚;符合RoHS标准
SGP07N120/ GP07N120主要应用：
- 电机控制
- 逆变器
- SMPS
英飞凌 IGBT单管参数说明：
|
Type |
VCE |
IC |
Eoff |
Tj |
Package |
Marking |
|
SGP07N120 |
1200V |
8A |
0.7mJ |
150℃ |
PG-TO-220-3 |
GP07N120 |
SGP07N120/ GP07N120最大额定值：
|
Parameter |
Symbol |
Value |
Unit |
|
Collector-emitter voltage |
VCE |
1200 |
V |
|
DC collector current TC = 25°C TC = 100°C |
IC |
16.5 7.9 |
A |
|
Pulsed collector current, tp limited by Tvjmax |
ICpul s |
27 | |
|
Turn off safe operating area VCE≤1200V, Tvj≤150°C |
- |
27 | |
|
Gate-emitter voltage |
VGE |
±20 |
V |
|
Avalanche energy, single pulse IC = 8A, VCC = 50V, RGE = 25Ω, start at Tj = 25℃ |
EAS |
40 |
mJ |
|
Short circuit withstand time2 VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤150℃ |
tsc |
10 |
uS |
|
Power dissipation TC = 25°C |
Ptot |
-125 |
W |
|
Operating junction and storage temperature |
Tj ,Tstg |
-55...+150 |
°C |
|
Soldering temperature, 1.6mm (0.063 in.) from case for 10s |
- |
260 |
