F9Z24N|IRF9Z24N IR P沟道HEXFET功率MOSFET 现货热销

F9Z24N/ IRF9Z24N 第五代 HEXFET MOSFE是IR国际整流器公司(International Rectifier)采用先进的处理技术，实现尽可能低的导通电阻，产品主要适用于工业用电池、电源、高功率DC马达及电动工具。

IR F9Z24N/ IRF9Z24N MOSFET特点：

●V_DSS = 55V

●R_DS(on) = 0.175W

●I_D = -12A
●先进工艺技术
●动态的dv/ dt 电压变化率
●工作温度175℃
●快速切换
●全额定雪崩

●封装：TO -220AB

IR F9Z24N/ IRF9Z24N MOSFET绝对最大额定值：

	Parameter	F9Z24N/ IRF9Z24N	Unit
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	-12	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	-8.5
IDM	Pulsed Drain Current 1	-48
PD @TC = 25°C	Power Dissipation	45	W
	Linear Derating Factor	0.30	W/℃
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy .2	96	mJ
IAR	Avalanche Current1	-7.2	A
EAR	Repetitive Avalanche Energy1	4.5	mJ
dv/dt	Peak Diode Recovery dv/dt .3	-5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to+175	℃
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)	℃
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Notes: 1 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )

2 Starting TJ = 25°C, L = 3.7mH RG = 25W, IAS = -7.2A. (See Figure 12)

.3 ISD £ -7.2A, di/dt £ -280A/μs, VDD £ V(BR)DSS, TJ £ 175°C