IR国际整流器公司(International Rectifier)的 IRFZ24N MOSFE采用先进的加工技术，实现尽可能低的导通电阻，产品主要适用于工业用电池、电源、高功率DC马达及电动工具。
IR IRFZ24N MOSFET特点：
●VDSS = 55V
●RDS(on) = 0.07W
●ID = 17A
●先进工艺技术
●动态的dv/ dt 电压变化率
●工作温度175℃
●快速切换
●全额定雪崩
●封装：TO -220AB
IR IRFZ24N MOSFET绝对最大额定值：
|
|
Parameter |
IRFZ24N |
Unit |
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
17 |
A |
|
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
12 | |
|
IDM |
Pulsed Drain Current |
68 | |
|
PD @TC = 25°C |
Power Dissipation |
45 |
W |
|
|
Linear Derating Factor |
0.30 |
W/℃ |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy . |
71 |
mJ |
|
IAR |
Avalanche Current |
10 |
A |
|
EAR |
Repetitive Avalanche Energy |
4.5 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt . |
5.0 |
V/ns |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to+175 |
℃ |
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) | |
|
|
Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
|
