HGT1S20N60A4S9A Fairchild代理600V SMPS Series N-Channel IGBTs HGT1S20N60A4S9A全新现货 深圳市亨力拓电子有限公司货源电话：0755-83293082 阮先生
HGT1S20N60A4S9A Fairchild代理600V SMPS Series N-Channel IGBTs 大批量到货
HGT1S20N60A4S9A Fairchild代理600V SMPS Series N-Channel IGBTs
600V, SMPS Series N-Channel IGBTs
The HGT1S20N60A4S9A is MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49339.
Features
• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
