最新到货仙童FQP12N60C / FQPF12N60C 12A/600V N沟道MOSFET
仙童(FAIRCHILD) FQP12N60C / FQPF12N60C 600V的N沟道增强型功率场效应晶体管(MOSFET),采用飞兆半导体先进的DMOS技术,最大限度地减少通态电阻，提供出色的开关性能，能经受住了高能量脉冲雪崩。FQP12N60C / FQPF12N60C主要适用于高效开关电源，电子灯镇流器等。
仙童FQP12N60C / FQPF12N60C MOSFET特点：
•12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
•12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
•低栅极电荷（典型值48 nC）
•低Crss（典型值21 pF）
•快速切换
•100％雪崩测试
•改进的dv / dt的能力
•低Crss（典型值21 pF）
•快速切换
•100％雪崩测试
•改进的dv / dt的能力
•封装：FQP12N60C：TO-220
FQPF12N60C：TO-220F
•包装说明：50只/管；1K/盒
•符合RoHS标准
仙童FQP12N60C / FQPF12N60C MOSFET绝对最大额定值：
仙童FQP12N60C / FQPF12N60C MOSFET 引脚说明：
|
Symbol |
Parameter |
FQP12N60C |
FQPF12N60C |
Unit |
|
VDSS |
Drain-Source Voltage |
600 |
V | |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
12
7.4 |
12*
7.4* |
A
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
48 |
48* |
A |
|
VGSS |
Gate-Source Voltage |
±30 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
870 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
12 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
22.5 |
mJ | |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns | |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
225
1.78 |
51
0.41 |
W
W/°C |
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes,
1/8”from case for 5 seconds |
300 |
°C | |
