最新到货仙童FQPF12N60CT 12A/600V N沟道MOSFET

最新到货仙童FQPF12N60CT 12A/600V N沟道MOSFET

仙童(FAIRCHILD) FQPF12N60CT 600V的N沟道增强型功率场效应晶体管(MOSFET),采用飞兆半导体先进的DMOS技术,最大限度地减少通态电阻，提供出色的开关性能，能经受住了高能量脉冲雪崩。FQPF12N60CT主要适用于高效开关电源，电子灯镇流器等。

仙童FQPF12N60CT MOSFET特点：
•12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V

•低栅极电荷（典型值48 nC）
•低Crss（典型值21 pF）
•快速切换
•100％雪崩测试
•改进的dv / dt的能力

•封装：TO-220F

仙童FQPF12N60CT MOSFET绝对最大额定值：

Symbol	Parameter	Ratings	Unit
V_DSS	Drain-Source Voltage	600	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	12*	A
I_D		7.4*	A
I_DM	Drain Current - Pulsed (Note 1)	48*	A
V_GSS	Gate-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	870	mJ
I_AR	Avalanche Current (Note 1)	12	A
E_AR	Repetitive Avalanche Energy (Note 1)	5.1	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (TC = 25°C)	51	W
P_D	- Derate above 25°C	0.41	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-25 ~ +100 (*1)	°C
T_L	Maximum lead temperature for soldering purposes, 1/8﹒﹒ from case for 5 seconds	300	°C

仙童FQPF12N60CT MOSFET 引脚说明：